Gate Leakage
نویسنده
چکیده
1) Introduction Recent systems are built of MOSFET transistors. Here, MO stands for metal oxide and FE for field effect. This means, that – in contrast to bipolar transistors – the gate is isolated by a metal oxide (today SiO2) and the channel is just controlled by the field through this oxide. Thus theoretically, the principal of MOSFET devices is that there is no current flowing through the gate (just charging current when switching the device). For devices in 180nm technology or even older, the current through the gate oxides of real devices is really 0. When shrinking the devices, the gate capacitance has to be kept high as it significantly influences the threshold voltage and thus the performance of the device. The gate capacitance can be easily computed, as gate and channel form a nearly perfect parallel plate capacitor. Thus the gate capacitance can be calculated as C ox T W L / 2 SiO 0 gate ⋅ = ε ε , where 0 ε is the
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